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HM628512BI Series
4 M SRAM (512-kword x 8-bit)
ADE-203-935C (Z) Rev. 2.0 Aug. 24, 1999 Description
The Hitachi HM628512BI is a 4-Mbit static RAM organized 512-kword x 8-bit. HM628512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM628512BI Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin TSOP II and 32-pin DIP.
Features
* Single 5 V supply * Access time: 70/85 ns (max) * Power dissipation Active: 50 mW/MHz (typ) Standby: 10 W (typ) * Completely static memory. No clock or timing strobe required * Equal access and cycle times * Common data input and output: Three state output * Directly TTL compatible: All inputs and outputs * Battery backup operation * Operating temperature: -40 to +85C
HM628512BI Series
Ordering Information
Type No. HM628512BLPI-7 HM628512BLPI-8 HM628512BLFPI-7 HM628512BLFPI-8 HM628512BLTTI-7 HM628512BLTTI-8 HM628512BLRRI-7 HM628512BLRRI-8 Access time 70 ns 85 ns 70 ns 85 ns 70 ns 85 ns 70 ns 85 ns Package 600-mil 32-pin plastic DIP (DP-32) 525-mil 32-pin plastic SOP (FP-32D) 400-mil 32-pin plastic TSOP II (TTP-32D) 400-mil 32-pin plastic TSOP II reverse (TTP-32DR)
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HM628512BI Series
Pin Arrangement
HM628512BLPI Series HM628512BLFPI Series A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 (Top view) 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 A17 WE A13 A8 A9 A11 OE A10 CS I/O7 I/O6 I/O5 I/O4 I/O3 A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 (Top view) HM628512BLRRI Series VCC A15 A17 WE A13 A8 A9 A11 OE A10 CS I/O7 I/O6 I/O5 I/O4 I/O3 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 (Top view) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS HM628512BLTTI Series 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 A17 WE A13 A8 A9 A11 OE A10 CS I/O7 I/O6 I/O5 I/O4 I/O3
Pin Description
Pin name A0 to A18 I/O0 to I/O7 CS OE WE VCC VSS Function Address input Data input/output Chip select Output enable Write enable Power supply Ground
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HM628512BI Series
Block Diagram
V CC V SS
* * * * *
A18 A16 A1 A0 A2 A12 A14 A3 A7 A6 Row Decoder Memory Matrix 1,024 x 4,096
I/O0 Input Data Control I/O7
* *
Column I/O Column Decoder
* *
A10 A4 A5 A13 A17A15A8 A9 A11
* *
CS WE OE
Timing Pulse Generator Read/Write Control
4
HM628512BI Series
Function Table
WE x H H L L CS H L L L L OE x H L H L Mode Not selected Output disable Read Write Write VCC current I SB , I SB1 I CC I CC I CC I CC Dout pin High-Z High-Z Dout Din Din Ref. cycle -- -- Read cycle Write cycle (1) Write cycle (2)
Note: x: H or L
Absolute Maximum Ratings
Parameter Power supply voltage Voltage on any pin relative to V SS Power dissipation Operating temperature Storage temperature Storage temperature under bias Symbol VCC VT PT Topr Tstg Tbias Value -0.5 to +7.0 -0.5* to V CC + 0.3* 1.0 -40 to +85 -55 to +125 -40 to +85
1 2
Unit V V W C C C
Notes: 1. -3.0 V for pulse half-width 30 ns 2. Maximum voltage is 7.0 V
Recommended DC Operating Conditions (Ta = -40 to +85C)
Parameter Supply voltage Symbol VCC VSS Input high voltage Input low voltage Note: VIH VIL Min 4.5 0 2.4 -0.3
*1
Typ 5.0 0 -- --
Max 5.5 0 VCC + 0.3 0.6
Unit V V V V
1. -3.0 V for pulse half-width 30 ns
5
HM628512BI Series
DC Characteristics (Ta = -40 to +85C, VCC = 5 V 10% , VSS = 0 V)
Parameter Input leakage current Output leakage current Operating power supply current: DC Operating power supply current Symbol |ILI| |ILO | I CC I CC1 Min -- -- -- -- Typ*1 Max -- -- 8 45 1 1 15 70 Unit A A mA mA Test conditions Vin = VSS to V CC CS = VIH or OE = VIH or WE = VIL, VI/O = VSS to V CC CS = VIL, others = VIH/VIL, I I/O = 0 mA Min cycle, duty = 100% CS = VIL, others = VIH/VIL I I/O = 0 mA Cycle time = 1 s, duty = 100% I I/O = 0 mA, CS 0.2 V VIH V CC - 0.2 V, VIL 0.2 V CS = VIH Vin 0 V, CS V CC - 0.2 V I OL = 2.1 mA I OH = -1.0 mA
Operating power supply current
I CC2
--
10
20
mA
Standby power supply current: DC
I SB
-- -- -- 2.4
1 2 -- --
3 100 0.4 --
mA A V V
Standby power supply current (1): DC I SB1 Output low voltage Output high voltage Note: VOL VOH
1. Typical values are at VCC = 5.0 V, Ta = +25C and specified loading, and not guaranteed.
Capacitance (Ta = +25C, f = 1 MHz)
Parameter Input capacitance*
1 1
Symbol Cin CI/O
Typ -- --
Max 8 10
Unit pF pF
Test conditions Vin = 0 V VI/O = 0 V
Input/output capacitance* Note:
1. This parameter is sampled and not 100% tested.
6
HM628512BI Series
AC Characteristics (Ta = -40 to +85C, VCC = 5 V 10%, unless otherwise noted.)
Test Conditions * * * * Input pulse levels: 0.5 V to 2.5 V Input rise and fall time: 5 ns Input and output timing reference levels: 1.5 V Output load: 1 TTL Gate + C L (100 pF) (Including scope and jig)
Read Cycle
HM628512BI -7 Parameter Read cycle time Address access time Chip select access time Output enable to output valid Chip selection to output in low-Z Output enable to output in low-Z Chip deselection to output in high-Z Output disable to output in high-Z Output hold from address change Symbol t RC t AA t CO t OE t LZ t OLZ t HZ t OHZ t OH Min 70 -- -- -- 10 5 0 0 10 Max -- 70 70 35 -- -- 25 25 -- -8 Min 85 -- -- -- 10 5 0 0 10 Max -- 85 85 45 -- -- 30 30 -- Unit ns ns ns ns ns ns ns ns ns 2 2 1, 2 1, 2 Notes
7
HM628512BI Series
Write Cycle
HM628512BI -7 Parameter Write cycle time Chip selection to end of write Address setup time Address valid to end of write Write pulse width Write recovery time WE to output in high-Z Data to write time overlap Data hold from write time Output active from output in high-Z Output disable to output in high-Z Symbol t WC t CW t AS t AW t WP t WR t WHZ t DW t DH t OW t OHZ Min 70 60 0 60 50 0 0 30 0 5 0 Max -- -- -- -- -- -- 25 -- -- -- 25 -8 Min 85 75 0 75 55 0 0 35 0 5 0 Max -- -- -- -- -- -- 30 -- -- -- 30 Unit ns ns ns ns ns ns ns ns ns ns ns 2 1, 2, 7 3, 12 6 1, 2, 7 4 5 Notes
Notes: 1. t HZ , t OHZ and t WHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referred to output voltage levels. 2. This parameter is sampled and not 100% tested. 3. A write occurs during the overlap (tWP) of a low CS and a low WE. A write begins at the later transition of CS going low or WE going low. A write ends at the earlier transition of CS going high or WE going high. tWP is measured from the beginning of write to the end of write. 4. t CW is measured from CS going low to the end of write. 5. t AS is measured from the address valid to the beginning of write. 6. t WR is measured from the earlier of WE or CS going high to the end of write cycle. 7. During this period, I/O pins are in the output state so that the input signals of the opposite phase to the outputs must not be applied. 8. If the CS low transition occurs simultaneously with the WE low transition or after the WE transition, the output remain in a high impedance state. 9. Dout is the same phase of the write data of this write cycle. 10. Dout is the read data of next address. 11. If CS is low during this period, I/O pins are in the output state. Therefore, the input signals of the opposite phase to the outputs must not be applied to them. 12. In the write cycle with OE low fixed, tWP must satisfy the following equation to avoid a problem of data bus contention. t WP tDW min + tWHZ max
8
HM628512BI Series
Timing Waveforms
Read Timing Waveform (WE = VIH)
tRC
Address tAA tCO CS tLZ tOE tOLZ OE tOHZ tHZ
Dout
Valid Data tOH
9
HM628512BI Series
Write Timing Waveform (1) (OE Clock)
tWC Address tAW OE tCW CS
*8
tWR
tAS WE tOHZ Dout
tWP
tDW Din Valid Data
tDH
10
HM628512BI Series
Write Timing Waveform (2) (OE Low Fixed)
tWC Address tCW CS
*8
tWR
tAW tWP
WE
tAS tWHZ tOW
tOH
*9
*10
Dout tDW Din tDH
*11
Valid Data
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HM628512BI Series
Low VCC Data Retention Characteristics (Ta = -40 to +85C)
Parameter VCC for data retention Data retention current Chip deselect to data retention time Operation recovery time Symbol VDR I CCDR t CDR tR Min 2 -- 0 t RC*
4
Typ -- 1* -- --
3
Max -- 50* -- --
1
Unit V A ns ns
Test conditions*2 CS V CC - 0.2 V, Vin 0 V VCC = 3.0 V, Vin 0 V CS V CC - 0.2 V See retention waveform
Notes: 1. For L-version and 20 A (max.) at Ta = -40 to +40C. 2. CS controls address buffer, WE buffer, OE buffer, and Din buffer. In data retention mode, Vin levels (address, WE, OE, I/O) can be in the high impedance state. 3. Typical values are at VCC = 3.0 V, Ta = +25C and specified loading, and not guaranteed. 4. t RC = read cycle time.
Low V CC Data Retention Timing Waveform (CS Controlled)
tCDR VCC 4.5 V Data retention mode tR
2.4 V VDR CS 0V CS VCC - 0.2 V
12
HM628512BI Series
Package Dimensions
HM628512BLPI Series (DP-32)
Unit: mm
32
41.90 42.50 Max
17 13.4 13.7 Max
1 2.30 Max
5.08 Max
1.20
16 15.24
0.51 Min 2.54 Min
2.54 0.25
0.48 0.10
0.25 - 0.05 0 - 15
+ 0.11
Hitachi Code JEDEC EIAJ Weight (reference value)
DP-32 -- Conforms 5.1 g
13
HM628512BI Series
Package Dimensions (cont.)
HM628512BLFPI Series (FP-32D)
Unit: mm
20.45 20.95 Max 32 17
1 1.00 Max
16 3.00 Max *0.22 0.05 0.20 0.04
11.30
14.14 0.30 1.42
0.12 0.15 + 0.10 -
0 - 8 0.80 0.20
1.27 *0.40 0.08 0.38 0.06
0.10 0.15 M
*Dimension including the plating thickness Base material dimension
Hitachi Code JEDEC EIAJ Weight (reference value)
FP-32D Conforms -- 1.3 g
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HM628512BI Series
Package Dimensions (cont.)
HM628512BLTTI Series (TTP-32D)
Unit: mm
20.95 21.35 Max 32 17
1 *0.42 0.08 0.40 0.06 1.15 Max
1.27 0.21
M
16
10.16
0.80 11.76 0.20 0 - 5 0.50 0.10
0.10
*0.17 0.05 0.125 0.04
0.13 0.05
1.20 Max
*Dimension including the plating thickness Base material dimension
Hitachi Code JEDEC EIAJ Weight (reference value)
TTP-32D Conforms -- 0.51 g
15
HM628512BI Series
Package Dimensions (cont.)
HM628512BLRRI Series (TTP-32DR)
Unit: mm
20.95 21.35 Max 1 16
32 *0.42 0.08 0.40 0.06 1.15 Max
1.27 0.21
M
17
10.16
0.80 11.76 0.20 0 - 5 0.50 0.10
0.10
*0.17 0.05 0.125 0.04
0.13 0.05
1.20 Max
*Dimension including the plating thickness Base material dimension
Hitachi Code JEDEC EIAJ Weight (reference value)
TTP-32DR Conforms -- 0.51 g
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HM628512BI Series
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to:
Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223
Copyright (c) Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
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HM628512BI Series
Revision Record
Rev. Date 0.0 0.1 Contents of Modification Drawn by K. Imato S. Kunito Approved by K. Imato K. Imato Nov. 2, 1998 Initial issue Dec. 14, 1998 DC Characteristics I CC1: --/40/60 mA to --/45/70 mA I SB1 max: 40 A to 100 A Low VCC Data Retention Characteristics I CCDR max: 20 A to 50 A t R min: 5 ms to tRC ms Change of note1 Addition of note4 Jul. 2, 1999 Deletion of Preliminary
1.0 2.0
S. Kunito
K. Imato
Aug. 24, 1999 Low VCC Data Retention Characteristics Correct error: tR unit ms to ns
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